Threading dislocation reduction in strained layers

نویسندگان

  • A. E. Romanov
  • A. F. Ioffe
  • J. S. Speck
چکیده

In this article, we have developed models for threading dislocation ~TD! reduction due to the introduction of an intentionally strained layer. Three different types of dislocations have been considered in this model: misfit dislocations ~MDs!, mobile TDs, and TDs whose glide motion has been blocked by a MD crossing the glide path of the TD ~immobile TDs!. The models are based on MD formation by the process of lateral TD motion. The strain-induced TD motion leads to possible annihilation reactions of mobile TDs with either other mobile TDs or blocked TDs, or reactions in which a mobile TD is converted to an immobile TD by a blocking reaction with a MD. The evolution of the density of mobile and blocked TDs and the MD density is represented by three coupled nonlinear first order differential equations. When blocking of TDs by MDs is not considered, the equations have an analytical solution that shows that the final TD density should decrease exponentially where the argument of the exponent is proportional to the product of the reaction radius between TDs ~the annihilation radius rA! and the nominal misfit strain em . The no-blocking limit represents the maximum possible TD reduction through the introduction of a strained layer, regardless whether this layer has a discrete step in strain, step-grade, or continuous strain grading. When only blocking reactions are considered ~no annihilation!, again analytic solutions to the equations are obtained which show the maximum possible plastic strain relaxation for a discretely strained layer. Several examples of numerical solutions to the three coupled differential equations are described for cases that include both blocking and annihilation reactions. © 1999 American Institute of Physics. @S0021-8979~99!04901-4#

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

An approach to threading dislocation ‘‘reaction kinetics’’

An approach is developed to describe the evolution of threading dislocation ~TD! densities in lattice-mismatched epitaxial films. TD ensembles are treated in close correspondence to chemical species in chemical reaction kinetics. ‘‘Reaction rate’’ equations are derived for changing TD density with increasing film thickness for firstand second-order reactions. Selective area growth is an example...

متن کامل

Compliant effect of low-temperature Si buffer for SiGe growth

Relaxed SiGe attracted much interest due to the applications for strained Si/SiGe high electron mobility transistor, metal-oxide-semiconductor field-effect transistor, heterojunction bipolar transistor, and other devices. High-quality relaxed SiGe templates, especially those with a low threading dislocation density and smooth surface, are critical for device performance. In this work, SiGe film...

متن کامل

Multiplication of threading dislocations in strained metal films under sulfur exposure

Strained thin films often contain ordered networks of misfit dislocations which can determine their chemical and mechanical properties. We consider the reaction of sulfur with two-monolayer films of Cu on Ru(0001). These films contain a network of parallel partial dislocations, separating regions of fcc and hcp stacking, with threading edge dislocations where partial dislocations meet. Sulfur r...

متن کامل

Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells

GaAsxP1−x graded buffers were grown via solid source molecular beam epitaxy MBE to enable the fabrication of wide-bandgap InyGa1−yP solar cells. Tensile-strained GaAsxP1−x buffers grown on GaAs using unoptimized conditions exhibited asymmetric strain relaxation along with formation of faceted trenches, 100–300 nm deep, running parallel to the 01̄1 direction. We engineered a 6 m thick grading str...

متن کامل

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

We report structural analysis of completely relaxed GaSb epitaxial layers deposited monolithically on GaAs substrates using interfacial misfit (IMF) array growth mode. Unlike the traditional tetragonal distortion approach, strain due to the lattice mismatch is spontaneously relieved at the heterointerface in this growth. The complete and instantaneous strain relief at the GaSb/GaAs interface is...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1998